EFFECTS OF ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEAL ON GE FILMS GROWN EPITAXIALLY ON (100) GAAS

被引：0
|
作者：
TSENG, W [1 ]
DIETRICH, H [1 ]
DAVEY, J [1 ]
CHRISTOU, A [1 ]
ANDERSON, W [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1979年 / 8卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：715 / 715
页数：1
相关论文
共 48 条
  • [1] THE EFFECTS OF ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEAL ON GE FILMS GROWN EPITAXIALLY ON (100) GAAS
    TSENG, W
    DIETRICH, H
    DAVEY, J
    CHRISTOU, A
    ANDERSON, WT
    JOURNAL OF ELECTRONIC MATERIALS, 1980, 9 (03) : 685 - 692
  • [2] Ex-situ doping of epitaxially grown Ge on Si by ion-implantation and pulsed laser melting
    Milazzo, Ruggero
    Carraro, Chiara
    Frigerio, Jacopo
    Ballabio, Andrea
    Impellizzeri, Giuliana
    Scarpa, Daniele
    Andrighetto, Alberto
    Isella, Giovanni
    Napolitani, Enrico
    APPLIED SURFACE SCIENCE, 2020, 509
  • [3] EFFECTS OF ELECTRON-BEAM DURING ION-IMPLANTATION AND ION-BEAM-ASSISTED DEPOSITION
    LIU, XH
    MA, TC
    APPLIED PHYSICS LETTERS, 1993, 63 (14) : 1901 - 1902
  • [4] SUPERSATURATED SI-AS ALLOY FORMATION BY ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEALING
    TUROS, A
    MEYER, O
    GEERK, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02): : 99 - 102
  • [5] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTATION DAMAGE
    GREENWALD, AC
    KIRKPATRICK, AR
    LITTLE, RG
    MINNUCCI, JA
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 783 - 787
  • [6] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED GAAS
    VAIDYANATHAN, KV
    ANDERSON, CL
    BARRETT, B
    DUNLAP, HL
    HESS, LD
    GOLECKI, I
    NICOLET, MA
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C361 - C362
  • [7] FABRICATION OF SUPERCONDUCTING WEAK LINKS BY ELECTRON-BEAM LITHOGRAPHY AND ION-IMPLANTATION
    GAMO, K
    KAJIYA, A
    NAMBA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (04) : 731 - 732
  • [8] FABRICATION OF INTEGRATED INJECTION LOGIC WITH ELECTRON-BEAM LITHOGRAPHY AND ION-IMPLANTATION
    EVANS, SA
    BARTELT, JL
    SLOAN, BJ
    VARNELL, GL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (04) : 402 - 407
  • [9] JOSEPHSON JUNCTION FABRICATION BY MEANS OF ION-IMPLANTATION AND ELECTRON-BEAM LITHOGRAPHY
    GAMO, K
    NAMBA, S
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 47 (1-4): : 171 - 176
  • [10] CHARACTERISTICS OF EFG RIBBON SOLAR-CELLS FABRICATED BY THE ION-IMPLANTATION AND PULSED ELECTRON-BEAM ANNEALING TECHNIQUE
    HO, CT
    MOELLER, G
    WALD, FV
    SPITZER, MB
    SOLAR CELLS, 1984, 11 (01): : 29 - 39
12345