ANISOTROPY OF DIELECTRIC PERMITTIVITY IN UNIAXIALLY STRESSED NARROW-GAP SEMICONDUCTORS

被引：0
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作者：
VASKO, FT
PESETSKY, BI
STRIKHA, MV
机构：
来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1993年 / 38卷 / 08期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The strain-induced anisotropy of permittivity, caused by the virtual interband transitions in narrow-gap semiconductors is studied. The great phase shift between the waves polarized along and perpendicular to deformation with their propagation through the deformed crystal is predicted. Numerical calculations are made for InSb and Cd0.2Hg0.8Te.
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页码：1201 / 1204
页数：4
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