ANISOTROPY OF DIELECTRIC PERMITTIVITY IN UNIAXIALLY STRESSED NARROW-GAP SEMICONDUCTORS

被引：0
|
作者：
VASKO, FT
PESETSKY, BI
STRIKHA, MV
机构：
来源：
UKRAINSKII FIZICHESKII ZHURNAL | 1993年 / 38卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The strain-induced anisotropy of permittivity, caused by the virtual interband transitions in narrow-gap semiconductors is studied. The great phase shift between the waves polarized along and perpendicular to deformation with their propagation through the deformed crystal is predicted. Numerical calculations are made for InSb and Cd0.2Hg0.8Te.
引用
收藏
页码：1201 / 1204
页数：4
相关论文
共 50 条
  • [31] POSITRON-ANNIHILATION IN NARROW-GAP SEMICONDUCTORS
    BOUARISSA, N
    WEST, RN
    AOURAG, H
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1995, 188 (02): : 723 - 734
  • [32] New technology for the control of narrow-gap semiconductors
    Antoniou, I
    Bozhevolnov, V
    Melnikov, Y
    Yafyasov, A
    CHAOS SOLITONS & FRACTALS, 2003, 17 (2-3) : 219 - 223
  • [33] DIELECTRIC PERMITTIVITY OF SEMICONDUCTORS WITH NARROW FORBIDDEN GAP IN LONG-WAVE LIMIT
    SHEKA, DI
    KOROL, AN
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1976, 76 (01): : 413 - 418
  • [34] Electronic and optoelectronic devices in narrow-gap semiconductors
    Ashley, T
    NARROW GAP SEMICONDUCTORS 1995, 1995, (144): : 345 - 352
  • [35] LASER EPITAXY AND PROPERTIES OF NARROW-GAP SEMICONDUCTORS
    PLYATSKO, SV
    GROMOVOJ, YS
    SIZOV, FF
    DARCHUK, SD
    UKRAINSKII FIZICHESKII ZHURNAL, 1990, 35 (07): : 1064 - 1066
  • [36] AUGER RECOMBINATION IN NARROW-GAP SEMICONDUCTORS.
    Gel'mont, B.L.
    Soviet physics. Semiconductors, 1980, 14 (10): : 1140 - 1142
  • [37] RAMAN-SCATTERING IN NARROW-GAP SEMICONDUCTORS
    KUMAZAKI, K
    PROCEEDINGS OF THE INDIAN ACADEMY OF SCIENCES-CHEMICAL SCIENCES, 1990, 102 (05): : 607 - 611
  • [38] PICOSECOND INFRARED SWITCHING IN NARROW-GAP SEMICONDUCTORS
    SCHWARTZ, BD
    NURMIKKO, AV
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1980, 70 (06) : 606 - 606
  • [39] ELECTRON-TRANSPORT IN NARROW-GAP SEMICONDUCTORS
    CURBY, RC
    FERRY, DK
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (02): : 569 - 575
  • [40] NONSTOICHIOMETRIC DEFECTS IN NARROW-GAP AIVBVI SEMICONDUCTORS
    SIZOV, FF
    INORGANIC MATERIALS, 1988, 24 (12) : 1693 - 1697
12345