LOW THRESHOLD CURRENT-DENSITY INGAASP-INP LASERS GROWN IN A VERTICAL LIQUID-PHASE EPITAXIAL SYSTEM

被引：13
|
作者：
TAMARI, N
BALLMAN, AA
机构：
来源：
APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 03期
关键词：
D O I：
10.1063/1.92696
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：185 / 189
页数：5
相关论文
共 50 条
  • [41] DYNAMIC SPECTRAL LINEWIDTH IN INGAASP MULTIQUANTUM-WELL LASERS GROWN BY LIQUID-PHASE EPITAXY
    SASAI, Y
    OHYA, J
    OGURA, M
    KAJIWARA, T
    ELECTRONICS LETTERS, 1987, 23 (05) : 232 - 233
  • [42] LPE GROWTH OF LATTICE-MATCHED INGAASP ON GAAS0.69P0.31 SUBSTRATES AND LOW THRESHOLD CURRENT-DENSITY OPERATION OF VISIBLE INGAASP DH LASERS
    FUJIMOTO, A
    WATANABE, H
    TAKEUCHI, M
    SHIMURA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (08): : L653 - L656
  • [43] Low-threshold current density InAs quantum dash lasers on InP (100) grown by molecular beam epitaxy
    Zhou, D.
    Piron, R.
    Dontabactouny, M.
    Dehaese, O.
    Grillot, F.
    Batte, T.
    Tavernier, K.
    Even, J.
    Loualiche, S.
    ELECTRONICS LETTERS, 2009, 45 (01) : 50 - U15
  • [44] LOW THRESHOLD CURRENT-DENSITY (100) GAINASP-INP DOUBLE-HETEROSTRUCTURE LASERS FOR WAVELENGTH 1.3-MU-M
    ITAYA, Y
    SUEMATSU, Y
    KATAYAMA, S
    KISHINO, K
    ARAI, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (09) : 1795 - 1805
  • [45] INGAASP-INP BURIED CRESCENT LASER EMITTING AT 1-3 MU-M WITH VERY LOW THRESHOLD CURRENT
    MUROTANI, T
    OOMURA, E
    HIGUCHI, H
    NAMIZAKI, H
    SUSAKI, W
    ELECTRONICS LETTERS, 1980, 16 (14) : 566 - 568
  • [46] CHARACTERIZATION OF DEFECTS IN LIQUID-PHASE EPITAXIAL INP AND INGAASP CRYSTALS BY SCANNING ELECTRON-MICROSCOPY AND ELECTRON-BEAM INDUCED CURRENT METHOD
    UEDA, O
    UMEBU, I
    YAMAZAKI, S
    OINUMA, K
    KANEDA, T
    KOTANI, T
    JOURNAL OF ELECTRON MICROSCOPY, 1984, 33 (01): : 1 - 9
  • [47] Highly strained InGaAs lasers grown by MOVPE with low threshold current density
    Chen, W. C.
    Su, Y. K.
    Chuang, R. W.
    Tsai, M. C.
    NOVEL IN - PLANE SEMICONDUCTOR LASERS IV, 2007, 6485
  • [48] DEPENDENCE OF THRESHOLD CURRENT-DENSITY AND DIFFERENTIAL QUANTUM EFFICIENCY OF SEPARATE CONFINEMENT DHS INGAASP/INP (LAMBDA=1,3MU-M) LASERS ON OUTLET LOSSES
    GARBUZOV, DZ
    ZAITSEV, SV
    ILIN, YV
    NALET, TA
    OVCHINNIKOV, AV
    TARASOV, IS
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 16 (09): : 50 - 54
  • [49] CONTROL OF THE LENGTH OF TRANSITION LAYERS UNDER LIQUID-PHASE HETEROEPITAXY (LPHE) IN THE INGAASP/INP SYSTEM
    KIZHAEV, KY
    KUCHINSKII, VI
    NIKISHIN, SA
    POGREBITSKII, KY
    SMIRNITSKII, VB
    FALEEV, NN
    ZHURNAL TEKHNICHESKOI FIZIKI, 1990, 60 (03): : 123 - 128
  • [50] LOW THRESHOLD CURRENT-DENSITY GAINASSB/GAALASSB DH LASERS EMITTING AT 2.2MUM
    HERRERAPEREZ, JL
    MOROSINI, MBZ
    DASILVEIRA, ACF
    PATEL, NB
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1992, (120): : 483 - 486
12345