X-RAY TOPOGRAPHY OF GROWTH STEP SOURCES IN LPE GALLIUM-ARSENIDE

被引：7
|
作者：
BAUSER, E
HAGEN, W
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1980年 / 50卷 / 03期
关键词：
D O I：
10.1016/0022-0248(80)90027-5
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：771 / 773
页数：3
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