CORRELATION BETWEEN SURFACE STRUCTURE AND SURFACE STATES AT CLEAN GERMANIUM-(111) SURFACE

被引:53
作者
HENZLER, M
机构
关键词
D O I
10.1063/1.1658268
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3758 / &
相关论文
共 29 条
[11]   SURFACE STRUCTURES AND PROPERTIES OF DIAMOND-STRUCTURE SEMICONDUCTORS [J].
HANEMAN, D .
PHYSICAL REVIEW, 1961, 121 (04) :1093-&
[12]  
HEILAND G, 1961, FORTSCHR PHYS, V9, P393
[13]   LEITFAHIGKEIT UND FELDEFFEKT REINER SILIZIUMSPALTFLACHEN [J].
HENZLER, M .
PHYSICA STATUS SOLIDI, 1967, 19 (02) :833-&
[14]   EXPERIMENTAL STUDY OF ORIGIN OF SURFACE STATES ON CLEAN SURFACES [J].
HENZLER, M .
SURFACE SCIENCE, 1968, 9 (01) :31-&
[15]   SURFACE STATES ON CLEAN SILICON [J].
HENZLER, M ;
HEILAND, G .
SOLID STATE COMMUNICATIONS, 1966, 4 (10) :499-&
[16]  
HENZLER M, TO BE PUBLISHED
[19]   INTRINSIC SURFACE STATES IN SEMICONDUCTORS [J].
JONES, RO .
PHYSICAL REVIEW LETTERS, 1968, 20 (18) :992-&
[20]  
KATRICH GA, 1965, FIZ TVERD TELA+, V7, P1091