SURFACE STATES ON CLEAN SILICON

被引：6

作者：

HENZLER, M

HEILAND, G

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(66)90410-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：499 / &

共 8 条

ALLEN, FG ;

GOBELI, GW .

PHYSICAL REVIEW, 1962, 127 (01) :150-&

[2] SURFACE STATES ON CLEAVED (111) SILICON SURFACES [J].

ASPNES, DE ;

HANDLER, P .

[3] SURFACE CONDUCTIVITY OF CLEAVED SILICON SURFACES [J].

HANDLER, P .

PHYSICAL REVIEW, 1962, 126 (03) :971-&

[4] SURFACE STATES ON CLEAN SILICON [J].

HEILAND, G ;

LAMATSCH, H .

[5]

HEILAND G, 1964, FESTKORPERPROBLEME, V3

[6]

HEILAND G, 1961, FORTSCHR PHYS, V9, P393

[7] SURFACE STATES ON CLEAVED SILICON [J].

PALMER, DR ;

DAUENBAUGH, CE ;

MORRISON, SR .

[8]

SAUTER F, 1964, FESTKORPERPROBLEM ED, V3