SURFACE REACTIONS OF SILICON (3) WITH ALUMINUM AND INDIUM

被引：110
作者：
LANDER, JJ
MORRISON, J
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1965年 / 36卷 / 05期
关键词：
D O I：
10.1063/1.1703113
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1706 / &
相关论文
共 10 条
[1]   FIELD EMISSION FROM SILICON AND GERMANIUM - FIELD DESORPTION AND SURFACE MIGRATION [J].
ALLEN, FG .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 19 (1-2) :87-&
[2]  
ESTRUP PJ, TO BE PUBLISHED
[3]   LOW VOLTAGE ELECTRON DIFFRACTION STUDY OF OXIDATION AND REDUCTION OF SILICON [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (06) :2089-&
[4]   LOW-ENERGY ELECTRON DIFFRACTION STUDY OF SILICON SURFACE STRUCTURES [J].
LANDER, JJ ;
MORRISON, J .
JOURNAL OF CHEMICAL PHYSICS, 1962, 37 (04) :729-&
[5]   STRUCTURAL PROPERTIES OF CLEAVED SILICON AND GERMANIUM SURFACES [J].
LANDER, JJ ;
GOBELL, GW ;
MORRISON, J .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (08) :2298-+
[6]  
LANDER JJ, TO BE PUBLISHED
[7]  
LANDER JJ, 1965, J APPL PHYS, V35, P3593
[8]  
MCRAE EG, TO BE PUBLISHED
[9]  
SEIWATZ R, TO BE PUBLISHED
[10]  
WOOD EA, 1964, J APPL PHYS, V35, P1305
1