共 50 条
- [41] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 7 (07): : 958 - 959
- [42] RESIDUAL ELECTRICAL RESISTIVITY INVESTIGATIONS ON HIGH PURITY GALLIUM. Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques, 1987, 78 (07): : 478 - 484
- [43] SOME PROPERTIES OF CHROMIUM-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 958 - 959
- [44] INVESTIGATION OF SOME PROPERTIES OF IRON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (06): : 713 - +
- [45] INJECTION PROPERTIES OF CONTACTS TO HIGH-RESISTIVITY SEMICONDUCTORS .2. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (09): : 980 - 986
- [46] OSCILLATIONS OF CURRENT IN DIODE STRUCTURES MADE OF TI-COMPENSATED HIGH-RESISTIVITY GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (04): : 546 - +
- [48] ELECTRICAL AND PHOTOELECTRIC PROPERTIES OF HIGH-RESISTIVITY CRYSTALS OF CADMIUM TELLURIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (07): : 776 - +
- [49] THE USE OF TRANSVERSE ELECTROREFLECTANCE (TER) FOR THE INVESTIGATION OF SURFACE CARRIER CONCENTRATIONS IN HIGH-RESISTIVITY CHROMIUM DOPED GALLIUM-ARSENIDE (CR-GAAS) PHYSICA B & C, 1982, 112 (03): : 406 - 410