SOME INVESTIGATIONS OF ELECTRICAL PROPERTIES AND INJECTION CONDUCTIVITY OF HIGH-RESISTIVITY NICKEL-DOPED GALLIUM ARSENIDE

被引:0
|
作者
MURYGIN, VI
RUBIN, VS
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1970年 / 3卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:810 / +
页数:1
相关论文
共 50 条
  • [31] INVESTIGATION OF PHOTOELECTRIC PROPERTIES OF N-I-N STRUCTURES MADE OF HIGH-RESISTIVITY GALLIUM-ARSENIDE
    ANISIMOVA, ID
    MAMEDOVA, AZ
    MIKHAILOV, II
    RUDOVOL, TV
    KOROB, EB
    STAFEEV, VI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (08): : 951 - 952
  • [32] ELECTRICAL-PROPERTIES OF NICKEL-DOPED ARSENIC TRISULFIDE
    GOYAL, N
    SHUKLA, R
    LAL, M
    PRAMANA-JOURNAL OF PHYSICS, 1993, 40 (05): : 377 - 389
  • [33] SOME FEATURES OF THE ELECTRICAL PROPERTIES OF EPITAXIAL TIN-DOPED GALLIUM ARSENIDE.
    Emel'yanenko, O.V.
    Lagunova, T.S.
    Radu, R.K.
    Talalakin, G.N.
    Telegin, A.A.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1973, 7 (05): : 665 - 666
  • [34] ELECTROLUMINESCENCE OF S-TYPE DIODES MADE OF IRON- AND NICKEL-DOPED GALLIUM ARSENIDE
    MURYGIN, VI
    RUBIN, VS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (07): : 917 - +
  • [35] Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron
    Khludkov, S. S.
    Prudaev, I. A.
    Tolbanov, O. P.
    RUSSIAN PHYSICS JOURNAL, 2018, 61 (03) : 491 - 497
  • [36] Electrical, Structural, and Magnetic Properties of Gallium Arsenide Doped with Iron
    S. S. Khludkov
    I. A. Prudaev
    O. P. Tolbanov
    Russian Physics Journal, 2018, 61 : 491 - 497
  • [37] DEFECT CENTERS INVOLVING BORON IMPURITIES IN IRRADIATED AND ANNEALED HIGH-RESISTIVITY GALLIUM-ARSENIDE
    MAGUIRE, J
    NEWMAN, RC
    GRANT, I
    RUMSBY, D
    WARE, RM
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1985, 18 (10) : 2029 - 2040
  • [38] ELECTRICAL PROPERTIES OF TYPE GALLIUM ARSENIDE AT HIGH TEMPERATURES
    AKITA, K
    IIDA, H
    RYUZAN, O
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (03) : 392 - &
  • [39] SOME FEATURES OF ELECTRICAL-CONDUCTION IN HIGH-RESISTIVITY GAAS
    BRODOVOI, VA
    DERIKOT, NZ
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 74 - 76
  • [40] SOME ELECTRICAL PROPERTIES OF SEMI-INSULATING GALLIUM ARSENIDE
    KULSRESH.AP
    YUNOVICH, AE
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 2058 - +