ELECTRIC-FIELD ENHANCED EMISSION OF HOLES FROM THE DOUBLE DONOR LEVEL OF THE EL2 DEFECT IN GAAS

被引：0
|
作者：
MAKOSA, A
WOSINSKI, T
SZKIELKO, W
机构：
来源：
ACTA PHYSICA POLONICA A | 1992年 / 82卷 / 05期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
引用
收藏
页码：813 / 816
页数：4
相关论文
共 50 条
  • [1] Phonon-assisted tunnel emission of holes from the double donor level of the EL2 defect
    Wosinski, Tadeusz
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2016, 253 (10): : 1916 - 1922
  • [2] The energy level of the EL2 defect in GaAs
    Bourgoin, JC
    Neffati, T
    SOLID-STATE ELECTRONICS, 1999, 43 (01) : 153 - 158
  • [3] Double donor behavior of EL2 defect in photoquenching experiment
    Inst of Semiconductors, Chinese Acad of Sciences, Beijing, China
    Rare Met, 2 (129-133):
  • [4] Double Donor Behavior of EL2 Defect in Photoquenching Experiment
    周滨
    杨锡权
    王占国
    Rare Metals, 1998, (02) : 50 - 54
  • [5] Electric-field-enhanced electron capture coefficient of EL2 level in semi-insulating GaAs
    Kiyama, M
    Tatsumi, M
    Yamada, M
    APPLIED PHYSICS LETTERS, 2005, 86 (01) : 012102 - 1
  • [6] Electric-field-enhanced electron emission from the EL5 deep-level defect in. GaAs
    Tsarova, Tatsiana
    Wosinski, Tadeusz
    Makosa, Andrzej
    Tkaczyk, Zbigniew
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 351 - 354
  • [7] A NOVEL TECHNIQUE FOR THE STUDY OF ELECTRIC-FIELD ENHANCED EMISSION FROM A DEEP-LEVEL DEFECT
    LI, GP
    WANG, KL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (06) : C239 - C239
  • [8] ON THE IDENTIFICATION OF THE DOUBLE DONOR STATE OF EL2 IN P-TYPE GAAS
    BENCHERIFA, A
    BREMOND, G
    NOUAILHAT, A
    GUILLOT, G
    GUIVARCH, A
    REGRENY, A
    REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (08): : 891 - 895
  • [9] KINETICS OF HOLES OPTICALLY-EXCITED FROM THE ASGA EL2 MIDGAP LEVEL IN SEMIINSULATING GAAS
    HENDORFER, G
    KAUFMANN, U
    PHYSICAL REVIEW B, 1991, 43 (18): : 14569 - 14573
  • [10] ELECTRON NUCLEAR DOUBLE-RESONANCE (ENDOR) SPECTROSCOPY OF THE EL2 DEFECT IN GAAS
    MEYER, BK
    REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05): : 809 - 816
12345