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- [4] DEEP-ACCEPTOR-MEDIATED PHOTOQUENCHING OF THE MIDGAP DONOR EL2 IN SEMIINSULATING GAAS PHYSICAL REVIEW B, 1995, 52 (03): : 1666 - 1673
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- [7] PHOTOQUENCHING OF ELECTRONIC PARAMAGNETIC-RESONANCE ASGA AND METASTABLE MECHANISM OF EL2 DEFECT IN GAAS CHINESE PHYSICS, 1989, 9 (04): : 976 - 981
- [8] EPR AS ANTISITE PHOTOQUENCHING BEHAVIOR AND EL2 ATOMIC CONFIGURATION IN SEMI-INSULATING GAAS SEMI-INSULATING III-V MATERIALS, MALMO 1988, 1988, : 387 - 390