ELECTRIC-FIELD ENHANCED EMISSION OF HOLES FROM THE DOUBLE DONOR LEVEL OF THE EL2 DEFECT IN GAAS

被引：0
|
作者：
MAKOSA, A
WOSINSKI, T
SZKIELKO, W
机构：
来源：
ACTA PHYSICA POLONICA A | 1992年 / 82卷 / 05期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Strong electric-field enhancement of the thermal emission rate of holes from the doubly ionized charge state of the EL2 defect was revealed with the deep-level transient spectroscopy in p-type GaAs and analyzed in a model of phonon-assisted tunnel effect. Similar dependence observed for the electric field directions parallel to three main crystallographic axes suggests tetrahedral symmetry of the defect which is consistent with its identification as the arsenic antisite.
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页码：813 / 816
页数：4
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