RESONANT INTERBAND TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE REGIONS

被引：15

作者：

BERESFORD, R ^{[1
]}

LUO, LF ^{[1
]}

LONGENBACH, KF ^{[1
]}

WANG, WI ^{[1
]}

机构：

[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期

关键词：

D O I：

10.1109/55.46950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices. In vertically integrated poly-type heterostructures of InAs/AISb/GaSb, the peak voltages are reduced by a factor of 2 compared to the Alln-As/GalnAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. © 1990 IEEE

引用

页码：110 / 112

页数：3

共 50 条

[41] Current instabilities in the negative differential resistance region of a large area resonant tunneling diode
Popov, VG
Dubrovskii, YV
Eaves, L
Maan, JC
Wang, KL
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 2001, 7-8 : 77 - 91
[42] THE EFFECT OF BAND OFFSET ON THE NEGATIVE DIFFERENTIAL RESISTANCE CHARACTERISTICS OF GAAS RESONANT TUNNELING DEVICES
HOUNG, MP
WANG, YH
WEI, HC
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (09) : 886 - 889
[43] Enhanced negative differential resistance in silicene double-barrier resonant tunneling diodes
Dan-Na Liu
Yong Guo
Yu Song
The European Physical Journal B, 2020, 93
[44] Demonstration of negative differential resistance in GaN/AlN resonant tunneling diodes at room temperature
Vashaei, Z.
Bayram, C.
Razeghi, M.
JOURNAL OF APPLIED PHYSICS, 2010, 107 (08)
[45] P and B doped Si resonant interband tunnel diodes with as-grown negative differential resistance
Thompson, P. E.
Jernigan, G. G.
Park, S. -Y.
Yu, R.
Anisha, R.
Berger, P. R.
Pawlik, D.
Krom, R.
Rommel, S. L.
ELECTRONICS LETTERS, 2009, 45 (14) : 759 - 760
[46] RESONANT TUNNELING TRANSISTORS WITH CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCES
BONNEFOI, AR
MCGILL, TC
BURNHAM, RD
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) : 636 - 638
[47] RESONANT TUNNELING DEVICES WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE AND DEMONSTRATION OF A 3-STATE MEMORY CELL FOR MULTIPLE-VALUED LOGIC APPLICATIONS
CAPASSO, F
SEN, S
CHO, AY
SIVCO, D
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (07) : 297 - 299
[48] Multiple Negative Differential Resistance Device by Using the Ambipolar Behavior of Tunneling Field Effect Transistor with Fast Switching Characteristics
Jeong, Jae Won
Jang, E-San
Shin, Sunhae
Kim, Kyung Rok
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2016, 16 (05) : 4753 - 4757
[49] EFFECTS OF PN-JUNCTION ON NEGATIVE DIFFERENTIAL RESISTANCE OF INGAAS/INALAS MULTIPLE QUANTUM-WELL RESONANT TUNNELING DIODES
KAWAMURA, Y
ASAI, H
NAGANUMA, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07): : L1052 - L1054
[50] Multiple negative differential resistance of InP/InGaAs superlattice-emitter resonant-tunneling bipolar transistor at room temperature
Tsai, JH
APPLIED PHYSICS LETTERS, 2003, 83 (13) : 2695 - 2697

← 1 2 3 4 5 →