RESONANT INTERBAND TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE REGIONS

被引：15
|
作者：
BERESFORD, R [1 ]
LUO, LF [1 ]
LONGENBACH, KF [1 ]
WANG, WI [1 ]
机构：
[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期
关键词：
D O I：
10.1109/55.46950
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices. In vertically integrated poly-type heterostructures of InAs/AISb/GaSb, the peak voltages are reduced by a factor of 2 compared to the Alln-As/GalnAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. © 1990 IEEE
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页码：110 / 112
页数：3
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