RESONANT INTERBAND TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE REGIONS

被引：15
|
作者：
BERESFORD, R [1 ]
LUO, LF [1 ]
LONGENBACH, KF [1 ]
WANG, WI [1 ]
机构：
[1] COLUMBIA UNIV,MICROELECTR SCI LABS,NEW YORK,NY 10027
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 03期
关键词：
D O I：
10.1109/55.46950
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report the first observations of multiple negative differential resistance (NDR) regions in resonant interband tunneling devices. In vertically integrated poly-type heterostructures of InAs/AISb/GaSb, the peak voltages are reduced by a factor of 2 compared to the Alln-As/GalnAs material system, while high peak-to-valley ratios of 4:1 (17:1) at 300 K (77 K) are maintained. © 1990 IEEE
引用
收藏
页码：110 / 112
页数：3
相关论文
共 50 条
  • [1] NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING
    SODERSTROM, JR
    CHOW, DH
    MCGILL, TC
    APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1094 - 1096
  • [2] NEGATIVE DIFFERENTIAL RESISTANCE DUE TO RESONANT INTERBAND TUNNELING OF HOLES
    CHOW, DH
    YU, ET
    SODERSTROM, JR
    TING, DZY
    MCGILL, TC
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3744 - 3746
  • [3] A VERTICALLY INTEGRATED RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCES
    POTTER, RC
    LAKHANI, AA
    HIER, HS
    BEYEA, D
    HEMPFLING, E
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (12) : 2452 - 2453
  • [4] THE NEGATIVE DIFFERENTIAL RESISTANCE BEHAVIOR IN DELTA-DOPED GAAS STRUCTURE DUE TO RESONANT INTERBAND TUNNELING
    HOUNG, MP
    WANG, YH
    CHEN, HH
    WEI, HC
    LEE, YH
    JOURNAL OF APPLIED PHYSICS, 1992, 71 (02) : 780 - 782
  • [5] NEGATIVE DIFFERENTIAL RESISTANCE OF SINGLE BARRIER INTERBAND TUNNELING DIODES
    KHRENOV, G
    RYZHII, V
    ZHAKHAROVA, A
    SOLID-STATE ELECTRONICS, 1993, 36 (09) : 1325 - 1333
  • [6] Resonant tunneling and multiple negative differential conductance features in long wavelength interband cascade infrared photodetectors
    Lei, Lin
    Li, Lu
    Huang, Wenxiang
    Massengale, Jeremy A.
    Ye, Hao
    Lotfi, Hossein
    Yang, Rui Q.
    Mishima, Tetsuya D.
    Santos, Michael B.
    Johnson, Matthew B.
    APPLIED PHYSICS LETTERS, 2017, 111 (11)
  • [7] GENERATION OF 4 NEGATIVE DIFFERENTIAL RESISTANCE REGIONS USING 2 RESONANT TUNNELING DIODES
    FOBELETS, K
    GENOE, J
    VOUNCKX, R
    BORGHS, G
    MICROELECTRONIC ENGINEERING, 1992, 19 (1-4) : 887 - 890
  • [8] RESONANT INTERBAND TUNNELING QUANTUM FUNCTIONAL DEVICE
    TEHRANI, S
    SHEN, J
    GORONKIN, H
    KRAMER, G
    TSUI, R
    ZHU, TX
    COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 855 - 860
  • [9] RESONANT TUNNELING DEVICE WITH MULTIPLE NEGATIVE DIFFERENTIAL RESISTANCE - DIGITAL AND SIGNAL-PROCESSING APPLICATIONS WITH REDUCED CIRCUIT COMPLEXITY
    SEN, S
    CAPASSO, F
    CHO, AY
    SIVCO, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (10) : 2185 - 2191
  • [10] TUNNELING AND NONRESONANT NEGATIVE DIFFERENTIAL RESISTANCE IN NARROW-WELL INTERBAND-TUNNELING DEVICES
    NAVEH, Y
    LAIKHTMAN, B
    PHYSICAL REVIEW B, 1994, 49 (23): : 16829 - 16832
12345