INTERSTITIAL AND SUBSTITUTIONAL COMPONENTS IN ION-IMPLANTED SILICON

被引：0
|
作者：
MAYER, JW
DAVIES, JA
ERIKSSON, L
机构：
来源：
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1968年 / 13卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：376 / &
相关论文
共 50 条
  • [21] LASER ANNEALING OF ION-IMPLANTED SILICON
    YOUNG, RT
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (03): : 264 - 265
  • [22] Photoluminescence study of ion-implanted silicon
    Terashima, Koichi
    Ikarashi, Taeko
    Watanabe, Masahito
    Kitano, Tomohisa
    NEC Research and Development, 1998, 39 (03): : 289 - 298
  • [23] Raman spectroscopy of ion-implanted silicon
    Tuschel, DD
    Lavine, JP
    MATERIALS MODIFICATION AND SYNTHESIS BY ION BEAM PROCESSING, 1997, 438 : 143 - 148
  • [24] Photoluminescence study of ion-implanted silicon
    Terashima, K
    Ikarashi, T
    Watanabe, M
    Kitano, T
    NEC RESEARCH & DEVELOPMENT, 1998, 39 (03): : 289 - 298
  • [25] Integral stress in ion-implanted silicon
    Tamulevicius, S
    Pozela, I
    Jankauskas, J
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1998, 31 (21) : 2991 - 2996
  • [26] THE ION-IMPLANTED ARSENIC TAIL IN SILICON
    BECK, SE
    JACCODINE, RJ
    CLARK, C
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 73 - 78
  • [27] ION-IMPLANTED DEVICES IN SILICON ON SAPPHIRE
    PETERSTROM, S
    HOLMEN, G
    PHYSICA SCRIPTA, 1980, 22 (03): : 308 - 313
  • [28] STRUCTURAL DISORDER IN ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BAUER, LO
    ACTA CRYSTALLOGRAPHICA SECTION A, 1972, 28 : S157 - S157
  • [29] PROPERTIES OF ION-IMPLANTED SILICON DETECTORS
    ZULLIGER, HR
    DRUMMOND, WE
    MIDDLEMAN, LM
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1972, NS19 (03) : 306 - +
  • [30] LASER PROCESSING OF ION-IMPLANTED SILICON
    APPLETON, BR
    WHITE, CW
    LARSON, BC
    WILSON, SR
    NARAYAN, J
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (01) : 1686 - 1692
12345