RESIDUAL STRESSES AT AN OXIDE-SILICON INTERFACE

被引：57
|
作者：
WHELAN, MV
GOEMANS, AH
GOOSSENS, LM
机构：
来源：
APPLIED PHYSICS LETTERS | 1967年 / 10卷 / 10期
关键词：
D O I：
10.1063/1.1754802
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：262 / &
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