INFRARED STUDY OF STRUCTURAL-CHANGES IN SILICON OXYNITRIDE FILMS

被引：0
|
作者：
PIVAC, B
机构：
[1] Rudger Boskovic Inst, Zagreb, Croatia
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 1993年 / 12卷 / 01期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Many properties of silicon oxynitride may be strongly influenced by chemical composition, preparation and further treatment. Therefore, a fundamental knowledge of these relationships and connections with material structures is necessary for successful film deposition. In order to understand and/or to predict the behaviour of such films, we studied the influence of thermal treatment on the structural properties of various silicon oxynitride films obtained by the PECVD technique.
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页码：23 / 26
页数：4
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