INFRARED STUDY OF STRUCTURAL-CHANGES IN SILICON OXYNITRIDE FILMS

被引:0
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作者
PIVAC, B
机构
[1] Rudger Boskovic Inst, Zagreb, Croatia
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中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Many properties of silicon oxynitride may be strongly influenced by chemical composition, preparation and further treatment. Therefore, a fundamental knowledge of these relationships and connections with material structures is necessary for successful film deposition. In order to understand and/or to predict the behaviour of such films, we studied the influence of thermal treatment on the structural properties of various silicon oxynitride films obtained by the PECVD technique.
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页码:23 / 26
页数:4
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