PECULIARITIES OF DEFECT FORMATION IN EPITAXIAL LAYERS GAXIN1-XASYSB1-Y

被引：0
|
作者：
VDOVIN, VI
DOLGINOV, LM
DRUZHININA, LV
LAPSHIN, AN
MILVIDSKY, MG
OSVENSKY, VB
SHERSHAKOV, AN
YUGOVA, TG
机构：
来源：
KRISTALLOGRAFIYA | 1981年 / 26卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：799 / 804
页数：6
相关论文
共 50 条
  • [41] THE EFFECT OF SOLID-SOLUTIONS COMPOSITION ON THE COHERENT GROWTH OF GAXIN1-XASYP1-Y EPITAXIAL LAYERS
    KRASILNIKOV, VS
    YUGOVA, TG
    BUBLIK, VT
    DROZDOV, YN
    MALKOVA, NV
    SHEPEKINA, GV
    KHANSEN, KR
    REZVOV, AV
    KRISTALLOGRAFIYA, 1988, 33 (06): : 1469 - 1477
  • [42] THE THERMAL-EXPANSION COEFFICIENT OF GAXIN1-XASYP1-Y EPITAXIAL LAYERS GROWN ON INP SUBSTRATE
    PIETSCH, U
    MARLOW, D
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (01): : 143 - 149
  • [43] CRYSTALLIZATION OF GaxIn1 - xAsySb1 - y SOLID SOLUTIONS ON GaSb AND InAs SUBSTRATES.
    Bochkarev, A.E.
    Gal'gazov, V.N.
    Dolginov, L.M.
    Selin, A.A.
    Neorganiceskie materialy, 1987, 23 (10): : 1610 - 1614
  • [44] PHOTOLUMINESCENCE OF LIQUID-PHASE EPITAXIAL GAXINL-XASYSB1-Y
    SRIVASTAVA, AK
    ZYSKIND, JL
    SULHOFF, JW
    DEWINTER, JC
    POLLACK, MA
    JOURNAL OF ELECTRONIC MATERIALS, 1986, 15 (05) : 314 - 314
  • [45] Photoluminescence of InxG1-xAsySb1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb
    Díaz-Reyes, J
    Cardona-Bedoya, JA
    Mendoza-Alvarez, J
    Manrique-Moreno, S
    Galván-Arellano, M
    Herrera-Gómez, ML
    Ramírez-Cruz, MA
    2004 1st International Conference on Electrical and Electronics Engineering (ICEEE), 2004, : 247 - 252
  • [46] Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications
    Gomez-Herrera, M. L.
    Herrera-Perez, J. L.
    Rodriguez-Fragoso, P.
    Riech, I.
    Mendoza-Alvarez, J. G.
    APPLIED SURFACE SCIENCE, 2008, 255 (03) : 761 - 763
  • [47] STUDY OF THE LOCAL-STRUCTURE OF GAXIN1-XASYSB1-Y, A QUATERNARY III-V SEMICONDUCTOR ALLOY, USING EXTENDED X-RAY ABSORPTION FINE-STRUCTURE (EXAFS) TECHNIQUE
    ISLAM, SM
    BUNKER, BA
    PHYSICA B, 1989, 158 (1-3): : 606 - 607
  • [48] 用拉曼散射谱与远红外反射谱研究GaxIn1-xAsySb1-y四元混晶的长波光学声子
    梁帮立
    蒋春萍
    夏冠群
    范叔平
    褚君浩
    红外与毫米波学报, 2001, (04) : 315 - 317
  • [49] VAPOR-PHASE GROWTH OF GAXIN1-XP EPITAXIAL LAYERS
    JOYCE, BD
    CLARKE, RC
    BORN, PJ
    FAIRHURST, KM
    JOURNAL OF CRYSTAL GROWTH, 1971, 11 (03) : 243 - +
  • [50] Interfaces in GaxIn1-xAsySb 1-yAlxGa1-xAsySb1-ymulti- quantum-well heterostructures probed by transmittance anisotropy spectroscopy
    Cerda-M´ndez, E.A. (ecerda@cactus.iico.uaslp.mx), 1600, American Institute of Physics Inc. (98):
12345