PECULIARITIES OF DEFECT FORMATION IN EPITAXIAL LAYERS GAXIN1-XASYSB1-Y

被引:0
|
作者
VDOVIN, VI
DOLGINOV, LM
DRUZHININA, LV
LAPSHIN, AN
MILVIDSKY, MG
OSVENSKY, VB
SHERSHAKOV, AN
YUGOVA, TG
机构
来源
KRISTALLOGRAFIYA | 1981年 / 26卷 / 04期
关键词
D O I
暂无
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:799 / 804
页数:6
相关论文
共 50 条
  • [11] Electronic structure of GaxIn1-xAsySb1-y quaternary alloy by recursion method
    El-Hasan, M
    Alayan, H
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1998, 20 (12): : 1871 - 1879
  • [12] Theoretical investigation of disorder effect on positron states in GaxIn1-xAsySb1-y/GaSb
    Bouarissa, N
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2001, 62 (06) : 1163 - 1170
  • [13] LIQUID-PHASE EPITAXY OF ISOPERIODIC HETEROSTRUCTURES GAXIN1-XASYSB1-Y/GASB
    BARANOV, AN
    KUZNETSOV, VV
    YAKOVLEV, YP
    GUSEINOV, A
    DZHURTANOV, BE
    KACHALOVA, IA
    MIRSAGATOV, M
    CHERNEVA, TV
    INORGANIC MATERIALS, 1991, 27 (04) : 566 - 569
  • [14] TUNABLE SEMICONDUCTOR-LASER UTILIZING GAXIN1-XASYSB1-Y QUARTERNARY COMPOUNDS
    AKIMOV, YA
    BUROV, AA
    ZAGARINSKII, EA
    KRYUKOVA, IV
    LESKOVICH, VI
    MATVEENKO, EV
    STEPANOV, BM
    KVANTOVAYA ELEKTRONIKA, 1980, 7 (03): : 644 - 646
  • [15] Positron annihilation characteristics in GaxIn1-xAsySb1-y lattice matched to different substrates
    Bouarissa, N
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2003, 103 (03): : 219 - 226
  • [16] Effect of Front Electrode on the Structure and Performances of GaxIn1-xAsySb1-y Thermophotovoltaic Cell
    Fan, Tingmei
    Liu, Zhiqiang
    Cui, Min
    Wei, Tingting
    Li, Xin
    Wang, Yu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (10) : 4989 - 4996
  • [17] Thermophotovoltaic Energy Conversion With GaSb Lattice-Matched GaxIn1-xAsySb1-y Diodes
    Zhang, Xiao-Long
    Huang, A-Bao
    Lou, Yi-Yi
    Li, Xin
    Cui, Min
    Wang, Yu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (02) : 901 - 907
  • [18] LONG-WAVELENGTH LATTICE-DYNAMICS OF GAXIN1-XASYSB1-Y QUATERNARY ALLOYS
    JAW, DH
    CHERNG, YT
    STRINGFELLOW, GB
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (05) : 1965 - 1969
  • [19] Determining the band gap of GaxIn1-xAsySb1-y quaternary alloy by infrared ellipsometric spectroscopy
    Liang, BL
    Xia, GQ
    Huang, ZM
    Fan, SP
    Chu, JH
    JOURNAL OF INFRARED AND MILLIMETER WAVES, 2000, 19 (03) : 188 - 190
  • [20] Composition dependence of band alignments in GaxIn1-xAsySb1-y heterojunctions lattice matched to GaSb and InAs
    Shim, Kyurhee
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (20)