INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES

被引：29

作者：

CIRILLO, NC ^{[1
]}

SHUR, MS ^{[1
]}

ABROKWAH, JK ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55416

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期

关键词：

D O I：

10.1109/EDL.1986.26298

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：71 / 74

页数：4

共 50 条

[41] SELECTIVE REACTIVE ION ETCHING FOR SHORT-GATE-LENGTH GAAS/ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED FIELD-EFFECT TRANSISTORS
KETTERSON, AA
ANDIDEH, E
ADESIDA, I
BROCK, TL
BAILLARGEON, J
LASKAR, J
CHENG, KY
KOLODZEY, J
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1493 - 1496
[42] GROWTH-STUDIES OF PSEUDOMORPHIC GAAS INGAAS ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTOR STRUCTURES
CHAN, KT
LIGHTNER, MJ
PATTERSON, GA
YU, KM
APPLIED PHYSICS LETTERS, 1990, 56 (20) : 2022 - 2024
[43] ULTRA-HIGH-SPEED MODULATION-DOPED FIELD-EFFECT TRANSISTORS - A TUTORIAL REVIEW
NGUYEN, LD
LARSON, LE
MISHRA, UK
PROCEEDINGS OF THE IEEE, 1992, 80 (04) : 494 - 518
[44] High speed P-type SiGe modulation-doped field-effect transistors
Arafa, M
Fay, P
Ismail, K
Chu, JO
Meyerson, BS
Adesida, I
IEEE ELECTRON DEVICE LETTERS, 1996, 17 (03) : 124 - 126
[45] HIGH-INDIUM MODULATION DOPED FIELD-EFFECT TRANSISTORS ON GAAS SUBSTRATES
UPPAL, PN
GILL, DM
SVENSSON, SP
TU, DW
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (02): : 1029 - 1031
[46] ALGAAS/GAAS BIPOLAR-TRANSISTORS WITH A MODULATION-DOPED SUPERLATTICE EMITTER
PALMIER, JF
SIBILLE, A
HARMAND, JC
DANGLA, J
ELECTRONICS LETTERS, 1987, 23 (18) : 936 - 938
[47] SMALL-SIGNAL NONQUASISTATIC MODELS FOR GAAS FIELD-EFFECT TRANSISTORS FOR IMPLEMENTATION IN SPICE .1. MODULATION-DOPED FIELD-EFFECT TRANSISTORS (MODFETS)
LIN, HK
ABDELMOTALEB, IM
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1991, 138 (06): : 735 - 748
[48] P-CHANNEL MODULATION-DOPED GASB FIELD-EFFECT TRANSISTORS
LUO, LF
LONGENBACH, KF
WANG, WI
ELECTRONICS LETTERS, 1991, 27 (05) : 472 - 474
[49] SELF-CONSISTENT SIMULATION OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS
WANG, YH
HOUNG, MP
CHU, CH
CHEN, HH
SOLID-STATE ELECTRONICS, 1994, 37 (02) : 237 - 241
[50] INFLUENCE OF THE DELTA DOPING POSITION IN THE CHANNEL ON THE DEVICE PERFORMANCE OF ALGAAS INGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS
DICKMANN, J
APPLIED PHYSICS LETTERS, 1992, 60 (01) : 88 - 90

← 1 2 3 4 5 →