INVERTED GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH EXTREMELY HIGH TRANSCONDUCTANCES

被引：29
|
作者：
CIRILLO, NC [1 ]
SHUR, MS [1 ]
ABROKWAH, JK [1 ]
机构：
[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55416
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 02期
关键词：
D O I：
10.1109/EDL.1986.26298
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：71 / 74
页数：4
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