GROWTH AND PROPERTIES OF AN LINBO3 FILM ON SAPPHIRE WITH AN LINBO3 BUFFER LAYER

被引：8
|
作者：
NOZAWA, T
机构：
[1] NTT Electrical Communications Lab, Musashino, Jpn, NTT Electrical Communications Lab, Musashino, Jpn
来源：
ELECTRONICS LETTERS | 1987年 / 23卷 / 24期
关键词：
LITHIUM COMPOUNDS - SAPPHIRE;
D O I：
10.1049/el:19870914
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A lithium niobate (LiNbO//3) epitaxial film has been grown by magnetron rf sputtering. It was grown on a sapphire substrate with a predeposited and annealed LiNbO//3 buffer layer. The effects of a buffer layer on growth-film properties were studied by physical analysis, including X-ray diffraction, reflection high-energy electron diffraction and scanning electron microscopy.
引用
收藏
页码：1321 / 1323
页数：3
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