GROWTH AND PROPERTIES OF AN LINBO3 FILM ON SAPPHIRE WITH AN LINBO3 BUFFER LAYER

被引：8

作者：

NOZAWA, T

机构：

[1] NTT Electrical Communications Lab, Musashino, Jpn, NTT Electrical Communications Lab, Musashino, Jpn

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

LITHIUM COMPOUNDS - SAPPHIRE;

D O I：

10.1049/el:19870914

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A lithium niobate (LiNbO//3) epitaxial film has been grown by magnetron rf sputtering. It was grown on a sapphire substrate with a predeposited and annealed LiNbO//3 buffer layer. The effects of a buffer layer on growth-film properties were studied by physical analysis, including X-ray diffraction, reflection high-energy electron diffraction and scanning electron microscopy.

引用

页码：1321 / 1323

页数：3

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