PHOTOCAPACITANCE INVESTIGATION OF DEFECTS IN GAAS0.6P0.4

被引:14
|
作者
FORBES, L [1 ]
FOGLE, RM [1 ]
机构
[1] UNIV ARKANSAS,DEPT ELECT ENGN,FAYETTEVILLE,AR 72701
关键词
D O I
10.1063/1.1655419
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:152 / 155
页数:4
相关论文
共 50 条
  • [1] INVESTIGATION OF GAAS0.6P0.4 AT PRESSURES UP TO 10 KBARS
    LIKHTER, AI
    PEL, EG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (09): : 1508 - &
  • [2] COPPER AS AN ELECTRON TRAP IN GAAS0.6P0.4
    TAN, HS
    HAN, MK
    HU, PY
    ZHENG, JH
    NG, SC
    GONG, H
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1994, 59 (03): : 245 - 251
  • [3] TEM OBSERVATIONS OF STRUCTURAL DEFECTS IN GAAS0.6P0.4 EPITAXIAL LAYERS ON (001) GAAS SUBSTRATES
    TORUN, J
    JAKOWLEW, B
    ACTA CRYSTALLOGRAPHICA SECTION A, 1978, 34 : S260 - S260
  • [4] MOCVD GROWTH OF GAAS0.6P0.4 ON SI SUBSTRATE
    TAKEYASU, M
    SOGA, T
    SAKAI, S
    UMENO, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (04): : L297 - L298
  • [5] NATIVE LEVELS AND DEGRADATION IN GAAS0.6P0.4 LEDS
    LOPEZ, C
    GARCIA, A
    GARCIA, F
    MUNOZ, E
    SOLID-STATE ELECTRONICS, 1979, 22 (01) : 81 - 85
  • [6] OPTIMIZATION STUDIES OF CVD GROWTH OF GAAS0.6P0.4
    WU, CH
    SOLOMON, R
    SNYDER, WL
    LARSEN, TL
    JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (06) : 741 - 741
  • [7] CHARACTERIZATION OF THE IRON AND NICKEL IMPURITIES IN GAAS0.6P0.4
    DAMESTANI, A
    FORBES, L
    JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (05) : 879 - 886
  • [8] ANNEALING STUDIES OF BE-IMPLANTED GAAS0.6P0.4
    MCLEVIGE, WV
    VAIDYANATHAN, KV
    STREETMAN, BG
    COMAS, J
    PLEW, L
    JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (04) : 547 - 558
  • [9] OPTIMIZATION STUDIES OF CVD GROWTH OF GAAS0.6P0.4
    WU, CH
    SOLOMON, R
    SNYDER, WL
    LARSEN, TL
    JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (06) : 791 - 821
  • [10] NON-AQUEOUS ELECTROLYTE FOR ANODIZING GAAS AND GAAS0.6P0.4
    STONEHAM, EB
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (10) : 1382 - 1382