MAGNETOPHONON RESONANCE ON 3 TYPES OF CARRIERS IN P-INSB

For the first time in a single experiment the magnetophonon resonances of three types of carriers in p-InSb are investigated: light holes (MPR(l)), heavy holes (MPR(h)), and electrons (MPR(e)). From the temperature shift of the ground series (most intensive ones) of MPR(l) and MPR(h) the valence-band parameters of the band structure as function of temperature are calculated. The investigation completed allows for the first time to identify nonearlier observed two-phonon transitions in p-InSb, alongside with an additional series of peculiarities: a satellite of the main MPR(h) series peaks at weak magnetic fields. The comparison of MPR(h) of two samples with different mobilities of heavy holes lead to the observance of a distortion in the period of the transverse field of the main MPR(h) series in the sample of less mobility of heavy holes.