Generation of donor centers in p-InSb by laser radiation

The theoretical calculation of distribution of the In vacancies in nonuniform temperature field in InSb has been performed within the model of redistribution of the In vacancies under laser action. Experiments were performed on p-InSb samples in the temperature range 180 - 290 K. Temperature gradient was provided by YAG:Nd laser illumination (lambda = 0.53 mu m, tau(p) = 15 ns). The laser donor centers (LDC) of two kind were found: one is unstable and can be annealed at room temperature with relaxation constant similar to 5 s and the other is stable, annealing temperature 670K. The threshold of LDC formations is 1.5 MW/cm(2). The activation energy of the stable donors centers is similar to 1.1 eV. Morphology investigation of the surface by Atomic Force,Microscopy (AFM) depending on the intensity of laser radiation showed that the melting point corresponds to the 1 = 3.5 MW/cm(2).