ON THE EFFECT OF AN SI3N4 BARRIER LAYER OVER GAAS1-XPX DURING ZN DIFFUSION - A PHOTOLUMINESCENCE ANALYSIS

被引：0
|
作者：
VIGIL, E
ZEHE, A
GRACIA, M
MARTINEZ, G
机构：
[1] TECH UNIV DRESDEN,SEKT PHYS,DDR-8027 DRESDEN,GER DEM REP
[2] AUTONOMOUS UNIV PUBLA,SOLID STATE RES LAB,PUBLA,MEXICO
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1988年 / 23卷 / 08期
关键词：
D O I：
10.1002/crat.2170230817
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1043 / 1051
页数：9
相关论文
共 50 条
  • [41] AN INTERPRETATION OF DLTS SPECTRA OF AL/SI3N4/ULTRATHIN SI/GAAS STRUCTURES - EFFECT OF QUANTUM-WELL OR INTERFACE STATES
    BARTOS, J
    PINCIK, E
    THURZO, I
    BALVINSKIJ, OE
    IVANCO, J
    CZECHOSLOVAK JOURNAL OF PHYSICS, 1993, 43 (9-10) : 875 - 879
  • [42] Speed enhancement of WSi2 nanocrystal memory with barrier-engineered Si3N4/HfAlO tunnel layer
    Lee, Dong Uk
    Lee, Hyo Jun
    Kim, Eun Kyu
    You, Hee-Wook
    Cho, Won-Ju
    Japanese Journal of Applied Physics, 2012, 51 (6 PART 2):
  • [43] Speed Enhancement of WSi2 Nanocrystal Memory with Barrier-Engineered Si3N4/HfAlO Tunnel Layer
    Lee, Dong Uk
    Lee, Hyo Jun
    Kim, Eun Kyu
    You, Hee-Wook
    Cho, Won-Ju
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
  • [44] Effect of milling energy on mechanical activation of (Mo + Si3N4) powders during the synthesis of Si3N4-MoSi2 in situ composites
    Singh, Sheela
    Godkhindi, M. M.
    Krishnarao, R. V.
    Murty, B. S.
    JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 2009, 29 (10) : 2069 - 2077
  • [45] Effect of the method of fabricating SiC, Si3N4, and a1n specimens on their resistance to hightemperature oxidation
    S. F. Korablev
    I. R. Korableva
    Refractories and Industrial Ceramics, 1999, 40 : 338 - 340
  • [46] COLUMN-III VACANCY-INDUCED AND IMPURITY-INDUCED LAYER DISORDERING OF ALXGA1-XAS-GAAS HETEROSTRUCTURES WITH SIO2 OR SI3N4 DIFFUSION SOURCES
    GUIDO, LJ
    MAJOR, JS
    BAKER, JE
    PLANO, WE
    HOLONYAK, N
    HSIEH, KC
    BURNHAM, RD
    JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6813 - 6818
  • [47] Effect of rotation speed during the milling of raw powder on the mechanical strength of Si3N4 ceramics
    Masaki, Hideyuki
    Watanabe, Naoyoshi
    Wada, Shigetaka
    Funtai Oyobi Fummatsu Yakin/Journal of the Japan Society of Powder and Powder Metallurgy, 1993, 40 (03): : 363 - 367
  • [48] Complex Analysis of the Stress-Strain State of the Surface Layer of Ground Si3N4–TiC Ceramics
    V. V. Kuzin
    S. N. Grigor’ev
    M. A. Volosova
    Refractories and Industrial Ceramics, 2021, 62 : 67 - 73
  • [49] Force Analysis of the Stress-Strain State of the Surface Layer of Ground Si3N4–TiC Ceramics
    V. V. Kuzin
    S. N. Grigor’ev
    M. A. Volosova
    Refractories and Industrial Ceramics, 2021, 61 : 720 - 726
  • [50] Effects of Si3N4 films on diffusion of boron and extended defects in silicon during post-implantation annealing
    Zaitsu, Y
    Osada, K
    Shimizu, T
    Matsumoto, S
    Yoshida, M
    Arai, E
    Abe, T
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196-2 : 1891 - 1895
12345