ON THE EFFECT OF AN SI3N4 BARRIER LAYER OVER GAAS1-XPX DURING ZN DIFFUSION - A PHOTOLUMINESCENCE ANALYSIS

被引：0
|
作者：
VIGIL, E
ZEHE, A
GRACIA, M
MARTINEZ, G
机构：
[1] TECH UNIV DRESDEN,SEKT PHYS,DDR-8027 DRESDEN,GER DEM REP
[2] AUTONOMOUS UNIV PUBLA,SOLID STATE RES LAB,PUBLA,MEXICO
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 1988年 / 23卷 / 08期
关键词：
D O I：
10.1002/crat.2170230817
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：1043 / 1051
页数：9
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