ELECTRICAL-PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED ALGAAS/GAAS HETEROSTRUCTURES

被引：10
|
作者：
TAKIKAWA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期
关键词：
D O I：
10.1143/JJAP.26.2026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2026 / 2032
页数：7
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