ELECTRICAL-PROPERTIES OF INTERFACE-TRAPS IN SELECTIVELY DOPED ALGAAS/GAAS HETEROSTRUCTURES

被引：10
|
作者：
TAKIKAWA, M
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1987年 / 26卷 / 12期
关键词：
D O I：
10.1143/JJAP.26.2026
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2026 / 2032
页数：7
相关论文
共 50 条
  • [21] THE EFFECT OF THE METALLURGICAL PROPERTIES OF THE IN-GAAS INTERFACE ON THE ELECTRICAL-PROPERTIES OF OHMIC CONTACTS TO GAAS
    KULKARNI, AK
    BLANKINSHIP, TJ
    THIN SOLID FILMS, 1982, 96 (04) : 285 - 290
  • [22] ELECTRICAL-PROPERTIES AND STRUCTURES OF THE MOCVD-AIN/GAAS INTERFACE
    FUJIEDA, S
    AKIMOTO, K
    HIROSAWA, I
    MOCHIZUKI, Y
    MIZUKI, J
    MATSUMOTO, Y
    MATSUI, J
    APPLIED SURFACE SCIENCE, 1989, 41-2 : 516 - 521
  • [23] CHEMICAL AND ELECTRICAL-PROPERTIES AT THE ANNEALED TI GAAS(110) INTERFACE
    MCCANTS, CE
    KENDELEWICZ, T
    MAHOWALD, PH
    BERTNESS, KA
    WILLIAMS, MD
    NEWMAN, N
    LINDAU, I
    SPICER, WE
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03): : 1466 - 1472
  • [24] Improvement of Curie temperature in Mn selectively δ-doped GaAs/AlGaAs heterostructures by self-consistent analysis
    Shen, Ye
    Wang, Jiqing
    Xing, Huaizhong
    Yu, Jianguo
    Mao, Huibing
    Lv, Bin
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 313 (01) : 17 - 20
  • [25] INFLUENCE OF MBE GROWTH-CONDITIONS ON PERSISTENT PHOTOCONDUCTIVITY EFFECTS IN N-ALGAAS AND SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ISHIKAWA, T
    KONDO, K
    HIYAMIZU, S
    SHIBATOMI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06): : L408 - L410
  • [26] MICROWAVE IV CHARACTERISTICS AND HIGH-FREQUENCY CURRENT INSTABILITIES IN SELECTIVELY DOPED HETEROSTRUCTURES ALGAAS/GAAS
    BORISOV, VI
    DMITRIEV, SG
    LYUBCHENKO, VE
    MEDVEDEV, BK
    MOKEROV, VG
    ROGASHKOV, SA
    SPIRIDONOV, KI
    RADIOTEKHNIKA I ELEKTRONIKA, 1994, 39 (02): : 321 - 327
  • [27] DIMENSIONAL RESONANCE OF THE TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ALLEN, SJ
    STORMER, HL
    HWANG, JCM
    PHYSICAL REVIEW B, 1983, 28 (08) : 4875 - 4877
  • [28] GROWTH AND TRANSPORT-PROPERTIES OF MODULATION-DOPED GAAS/ALGAAS HETEROSTRUCTURES
    ZHOU, JM
    HUANG, Y
    MENG, QH
    CHENG, WQ
    WU, YS
    LI, YK
    YANG, ZX
    CHINESE PHYSICS, 1986, 6 (04): : 887 - 891
  • [29] FABRICATION AND ELECTRICAL-PROPERTIES OF EPITAXIAL LAYERS OF GAAS DOPED WITH MANGANESE
    GOUSKOV, L
    BILAC, S
    PIMENTEL, J
    GOUSKOV, A
    SOLID-STATE ELECTRONICS, 1977, 20 (08) : 653 - 656
  • [30] ELECTRICAL-PROPERTIES OF SCHOTTKY DIODES OF TI ON HIGHLY DOPED GAAS
    ZUSSMAN, A
    JOURNAL OF APPLIED PHYSICS, 1986, 59 (11) : 3894 - 3900
12345