PREFERENTIAL SILICON EPITAXY WITH OXIDE MASKING

被引：0

|

作者：

SCHNABLE, GL

HILLEGAS, WJ

THORNTON, CG

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 08期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：C185 / C185

页数：1

相关论文

共 50 条

[31] Germanium epitaxy on silicon
Ye, Hui
Yu, Jinzhong
SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 2014, 15 (02)
[32] SLIP IN SILICON EPITAXY
BLOEM, J
GOEMANS, AH
JOURNAL OF APPLIED PHYSICS, 1972, 43 (03) : 1281 - &
[33] EPITAXY OF SILICON ON QUARTZ
BROWN, AS
JOYCE, BA
NEAVE, JH
STIRLAND, DJ
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1968, 1 : 70 - &
[34] AUTODOPING IN SILICON EPITAXY
GRAEF, MWM
LEUNISSEN, BJH
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C316 - C316
[35] EPITAXY OF DIAMOND ON SILICON
MILNE, DK
ROBERTS, PG
JOHN, P
JUBBER, MG
LIEHR, M
WILSON, JIB
DIAMOND AND RELATED MATERIALS, 1995, 4 (04) : 394 - 400
[36] AUTODOPING IN SILICON EPITAXY
CHANG, HR
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 219 - 224
[37] Flux masking and thickness uniformity in molecular beam epitaxy
J Vac Sci Technol B, 6 (2269):
[38] Flux masking and thickness uniformity in molecular beam epitaxy
Sadra, K
Lin, CH
Meese, JM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1995, 13 (06): : 2269 - 2275
[39] DIFFUSION MASKING OF SILICON AND GERMANIUM BY THE EVAPORATION OF SILICON MONOXIDE
KRIEGSMAN, B
SIMONYAN, K
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (08) : C175 - C175
[40] A DOUBLE DIFFUSED SILICON HIGH-FREQUENCY SWITCHING TRANSISTOR PRODUCED BY OXIDE MASKING TECHNIQUES
ASCHNER, JF
BITTMANN, CA
HARE, WFJ
KLEIMACK, JJ
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (05) : 415 - 417

← 1 2 3 4 5 →