PREFERENTIAL SILICON EPITAXY WITH OXIDE MASKING

被引：0
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作者：
SCHNABLE, GL
HILLEGAS, WJ
THORNTON, CG
机构：
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 08期
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中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C185 / C185
页数：1
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