PREFERENTIAL SILICON EPITAXY WITH OXIDE MASKING

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作者：

SCHNABLE, GL

HILLEGAS, WJ

THORNTON, CG

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1963年 / 110卷 / 08期

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O646 [电化学、电解、磁化学];

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081704 ;

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页码：C185 / C185

页数：1

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