SILICON MOLECULAR-BEAM EPITAXY - STATUS - DEVICES - TRENDS

被引：0

作者：

KASPER, E

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来源：

JOURNAL DE PHYSIQUE | 1988年 / 49卷 / C-4期

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D O I：

10.1051/jphyscol:1988473

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摘要：

引用

页码：347 / 355

页数：9

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