INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE SYSTEM GAAS-ASCL3-H2

被引：0

作者：

LAVRENTYEVA, LG

IKONNIKOVA, GM

IVLEVA, OM

KRASILNIKOVA, LM

机构：

来源：

KRISTALLOGRAFIYA | 1979年 / 24卷 / 02期

关键词：

D O I：

暂无

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：350 / &

共 50 条

[1] THE INFLUENCE OF AN ELECTRIC-FIELD ON THE GROWTH OF GALLIUM-ARSENIDE LAYERS IN THE GAAS-ASCL3-H2 SYSTEM
LAVRENTYEVA, LG
IKONNIKOVA, GM
KATAYEV, YG
NASIBULLIN, SS
KRISTALLOGRAFIYA, 1981, 26 (04): : 884 - 887
[2] KINETICS OF CAPTURE OF TE BY (111) GALLIUM-ARSENIDE FACES IN GAAS-ASCL3-H2 IN THE CASE OF SUPERSATURATIONS
LAVRENTYEVA, LG
VILISOVA, MD
MOSKOVKIN, VA
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1983, 26 (06): : 42 - 46
[3] INFLUENCE OF A SURFACE ELECTRIC-FIELD ON ABSORPTION OF LIGHT IN GALLIUM-ARSENIDE
KRAVCHENKO, AF
TEREKHOV, AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1488 - 1488
[4] INFLUENCE OF AN ELECTRIC-FIELD ON THE MAGNETORESISTANCE OF LIGHTLY DOPED GALLIUM-ARSENIDE
KAMARA, MS
LUKASHEVICH, MG
STELMAKH, VF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 695 - 696
[5] INFLUENCE OF AN ELECTRIC-FIELD ON THE NEGATIVE MAGNETORESISTANCE OF EPITAXIAL GALLIUM-ARSENIDE
LUKASHEVICH, MG
STELMAKH, VF
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (08): : 985 - 986
[6] INFLUENCE OF BUILT-IN ELECTRIC-FIELD ON ELECTROABSORPTION OF GALLIUM-ARSENIDE
BOBYLEV, BA
KRAVCHENKO, AF
TEREKHOV, AS
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (11): : 1381 - 1383
[7] INFLUENCE OF AN ELECTRIC-FIELD ON THE ACCUMULATION OF RADIATION DEFECTS IN GALLIUM-ARSENIDE
MAMONTOV, AP
PESHEV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (05): : 586 - 587
[8] CRYSTALLIZATION TEMPERATURE EFFECT ON THE RATE OF GROWTH OF GAAS EPITAXIAL LAYERS IN GAAS-ASCL3-H2
LAVRENTYEVA, LG
IVANOV, VG
IVONIN, IV
MOSKOVKIN, VA
TOROPOV, SE
IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1982, 25 (09): : 101 - 104
[9] INFLUENCE OF AN ELECTRIC-FIELD ON THE ACCUMULATION AND ANNEALING OF RADIATION DEFECTS IN GALLIUM-ARSENIDE
MAMONTOV, AP
PESHEV, VV
CHERNOV, IP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (12): : 1371 - 1372
[10] INFLUENCE OF AN ELECTRIC-FIELD ON THERMAL ANNEALING OF E3 CENTERS IN GALLIUM-ARSENIDE
MAMONTOV, AP
PESHEV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (06): : 711 - 712

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