INITIAL EMITTANCE MEASUREMENTS OF THE SUPERCONDUCTING ELECTRON-CYCLOTRON-RESONANCE AT NSCL

被引:4
|
作者
HARRISON, KA
ANTAYA, TA
机构
来源
REVIEW OF SCIENTIFIC INSTRUMENTS | 1994年 / 65卷 / 04期
关键词
D O I
10.1063/1.1145039
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
We report on preliminary emittance measurements of oxygen and argon ions extracted from the superconducting electron cyclotron resonance (SCECR). For oxygen, charge states 1+ through 8+ have been measured for 100% intensity with the SCECR tuned to maximize highly charged ions, at a 10 kV extraction voltage. For argon, charge states 6+ through 14+ have been measured under the same conditions. For both species, both normalized and unnormalized emittances show the same trend-increasing with charge Q for low charge, and falling sharply for highly charged ions. The increase in emittance with Q for low Q implies an expected magnetic field dependence. The decreasing emittance for high Q is unexpected, and possible explanations for this effect will be discussed.
引用
收藏
页码:1138 / 1140
页数:3
相关论文
共 50 条
  • [41] ANISOTROPIC ELECTRON-CYCLOTRON-RESONANCE ETCHING OF GAINP/ALGALNP HETEROSTRUCTURES
    SHUL, RJ
    SCHNEIDER, RP
    CONSTANTINE, C
    ELECTRONICS LETTERS, 1994, 30 (10) : 817 - 819
  • [42] ANISOTROPIC ELECTRON-CYCLOTRON-RESONANCE ETCHING OF TUNGSTEN FILMS ON GAAS
    SHUL, RJ
    RIEGER, DJ
    BACA, AG
    CONSTANTINE, C
    BARRATT, C
    ELECTRONICS LETTERS, 1994, 30 (01) : 84 - 85
  • [43] ELECTRON-CYCLOTRON-RESONANCE PLASMA AS A SOURCE OF MULTIPLY CHARGED IONS
    BERNHARDI, K
    FUCHS, G
    GOLDMAN, MA
    HERBERT, HC
    WALCHER, W
    WIESEMANN, K
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1976, 23 (02) : 999 - 1005
  • [44] Modeling of electron-cyclotron-resonance ion source and scaling laws
    Girard, A
    Perret, C
    Melin, G
    Lecot, C
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1998, 69 (02): : 1100 - 1102
  • [45] PROFILE SIMULATION OF ELECTRON-CYCLOTRON-RESONANCE PLANARIZATION OF AN INTERLEVEL DIELECTRIC
    LABUN, AH
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1994, 12 (06): : 3138 - 3144
  • [46] A VERY COMPACT ELECTRON-CYCLOTRON-RESONANCE ION-SOURCE
    BOUKARI, F
    WARTSKI, L
    COSTE, P
    FARCHI, A
    ROY, V
    AUBERT, J
    REVIEW OF SCIENTIFIC INSTRUMENTS, 1994, 65 (04): : 1097 - 1099
  • [47] SPUTTERING BEHAVIOR OF BORON USING ELECTRON-CYCLOTRON-RESONANCE PLASMA
    ITO, Y
    KURIKI, S
    SAIDOH, M
    NISHIKAWA, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (10): : 5959 - 5966
  • [48] PLASMA MODELING IN AN ELECTRON-CYCLOTRON-RESONANCE ION-SOURCE
    PESIC, S
    VUKOVIC, M
    PHYSICAL REVIEW A, 1990, 42 (06) : 3571 - 3578
  • [49] ELECTRON-CYCLOTRON-RESONANCE PLASMA IN MULTICUSP MAGNETS WITH A CHECKERED PATTERN
    MAEDA, M
    AMEMIYA, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (9A): : 5032 - 5037
  • [50] HYDROGEN UPTAKE INTO SILICON FROM AN ELECTRON-CYCLOTRON-RESONANCE PLASMA
    WAMPLER, WR
    BARBOUR, JC
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1978 - 1983