HIGH-EFFICIENCY HIGH-GAIN MONOLITHIC HETEROSTRUCTURE FET AMPLIFIER AT 31 GHZ

A three-stage heterostructure FET monolithic amplifier has achieved a power-added deficiency of 36% with 200 mW output and 18 dB gain at 31 GHz At a higher drain voltage, the output power increases to 288 mW (with 17.5 dB gain and 31% PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63 x 1.35 mm2 and requires only a single drain bias and a single gate bias.