HIGH-EFFICIENCY HIGH-GAIN MONOLITHIC HETEROSTRUCTURE FET AMPLIFIER AT 31 GHZ

被引：0
|
作者：
TSERNG, HQ
SAUNIER, P
KAO, YC
机构：
[1] Central Research Laboratories, Texas Instruments Incorporated, Dallas, Texas 75265, PO Box 655936
来源：
ELECTRONICS LETTERS | 1993年 / 29卷 / 03期
关键词：
FIELD-EFFECT TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS;
D O I：
10.1049/el:19930208
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A three-stage heterostructure FET monolithic amplifier has achieved a power-added deficiency of 36% with 200 mW output and 18 dB gain at 31 GHz At a higher drain voltage, the output power increases to 288 mW (with 17.5 dB gain and 31% PAE) at a power density of 0.7 W/mm. The MMIC chip measures 2.63 x 1.35 mm2 and requires only a single drain bias and a single gate bias.
引用
收藏
页码：304 / 306
页数：3
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