共 50 条
- [42] Sub-0.1 μm gate etch processes:: Towards some limitations of the plasma technology? JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 156 - 165
- [44] High rate CH4:H-2 plasma etch processes for InP JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1728 - 1732
- [45] Spatially-averaged model for plasma etch processes: Comparison of different approaches to electron kinetics Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1998, 16 (03): : 1560 - 1565
- [46] Spatially-averaged model for plasma etch processes: Comparison of different approaches to electron kinetics JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (03): : 1560 - 1565
- [48] Particle Modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (4A): : 2213 - 2219
- [49] Particle modeling of inductively coupled plasma and radicals flow to predict etch rate of silicon Shiozawa, M. (shiozawa@chapman.ifs.tohoku.ac.jp), 1600, Japan Society of Applied Physics (41):
- [50] Spatially-averaged model for plasma etch processes: comparison of different approaches to electron kinetics Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1998, 16 (3 pt 2):