DEFECTS IN SIO2/SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM

被引：6

作者：

UEDONO, A ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

OHJI, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 6A期

关键词：

MONOENERGETIC POSITRON BEAM; DOPPLER BROADENING PROFILE; SIO2; INTERFACE; DEFECT;

D O I：

10.1143/JJAP.33.3330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in SiO2/Si specimens were probed by using a monoenergetic positron beam. Doppler broadening profiles of the annihilation radiation were measured as a function of incident positron energy for SiO2(100 nm)/Si specimens fabricated by wet, dry and ultradry oxidation. The diffusion of positrons in the Si substrate was found to be enhanced by an electric field caused by positive charges near the SiO2/Si interface. The Doppler broadening profile corresponding to the annihilation of positrons in the Si substrate with the SiO2 film grown by wet oxidation was found to be broader than those in the specimens fabricated by dry or ultradry oxidation. This was attributed to the fact that the concentration of oxygen clusters in the Si substrate for the specimen fabricated by wet oxidation was higher than those for the specimens fabricated by dry or ultradry oxidation.

引用

页码：3330 / 3334

页数：5

共 50 条

[41] DEFECTS IN HEAVILY PHOSPHORUS-DOPED SI EPITAXIAL-FILMS PROBED BY MONOENERGETIC POSITRON BEAMS
UEDONO, A
TANIGAWA, S
SUZUKI, R
OHGAKI, H
MIKADO, T
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6286 - 6290
[42] Defects in ZnO thin films grown on ScAlMgO4 substrates probed by a monoenergetic positron beam
Uedono, A
Koida, T
Tsukazaki, A
Kawasaki, M
Chen, ZQ
Chichibu, S
Koinuma, H
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) : 2481 - 2485
[43] DEFECTS AT THE SI/SIO2 INTERFACE OF SIO2 PRECIPITATES IN SILICON
HOBBS, A
BARKLIE, RC
REESON, K
HEMMENT, PLF
ZEITSCHRIFT FUR PHYSIKALISCHE CHEMIE NEUE FOLGE, 1987, 151 : 251 - 257
[44] Photoluminescence from SiO2/Si/SiO2 structures
Photopoulos, P
Nassiopoulou, AG
JOURNAL OF PHYSICS-CONDENSED MATTER, 2003, 15 (21) : 3641 - 3650
[45] Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Delft Univ of Technology, Delft, Netherlands
Mater Sci Forum, (718-720):
[46] Depth dependence of defects in ion-implanted Si probed by a positron beam
Fujinami, M
Miyagoe, T
Sawada, T
Suzuki, R
Ohdaira, T
Akahane, T
POSITRON ANNIHILATION, ICPA-13, PROCEEDINGS, 2004, 445-6 : 78 - 80
[47] Characterization of defects at the Si/SiO2 interface of a polysilicon-gated MOS system by monoenergetic positrons
Clement, M
de Nijs, JMM
Schut, H
van Veen, A
Balk, P
POSITRON ANNIHILATION: ICPA-11 - PROCEEDINGS OF THE 11TH INTERNATIONAL CONFERENCE ON POSITRON ANNIHILATION, KANSAS CITY, MISSOURI, USA, MAY 1997, 1997, 255-2 : 718 - 720
[48] Silicide-formation-induced defects in Si substrate in Ti/Si systems by a monoenergetic positron beam
Wei, Long
Tanigawa, Shoichiro
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1994, 33 (1 A): : 290 - 294
[49] Defects in p+-gate metal-oxide-semiconductor structures probed by monoenergetic positron beams
Uedono, A
Hiketa, M
Tanigawa, S
Kitano, T
Kubota, T
Makabe, M
Suzuki, R
Ohdaira, T
Mikado, T
JOURNAL OF APPLIED PHYSICS, 1999, 86 (10) : 5385 - 5391
[50] DEFECTS IN SEPARATION BY IMPLANTED OXYGEN WAFER PROBED BY MONOENERGETIC POSITRON BEAMS
UEDONO, A
WATAUCHI, S
UJIHIRA, Y
WEI, L
TANIGAWA, S
SUZUKI, R
OHGAKI, H
MIKADO, T
KAMETANI, H
AKIYAMA, H
YAMAGUCHI, Y
KOUMARU, M
HYPERFINE INTERACTIONS, 1993, 79 (1-4): : 621 - 625

← 1 2 3 4 5 →