DEFECTS IN SIO2/SI STRUCTURES PROBED BY USING A MONOENERGETIC POSITRON BEAM

被引：6

作者：

UEDONO, A ^{[1
]}

WEI, L ^{[1
]}

TANIGAWA, S ^{[1
]}

OHJI, Y ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 6A期

关键词：

MONOENERGETIC POSITRON BEAM; DOPPLER BROADENING PROFILE; SIO2; INTERFACE; DEFECT;

D O I：

10.1143/JJAP.33.3330

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Defects in SiO2/Si specimens were probed by using a monoenergetic positron beam. Doppler broadening profiles of the annihilation radiation were measured as a function of incident positron energy for SiO2(100 nm)/Si specimens fabricated by wet, dry and ultradry oxidation. The diffusion of positrons in the Si substrate was found to be enhanced by an electric field caused by positive charges near the SiO2/Si interface. The Doppler broadening profile corresponding to the annihilation of positrons in the Si substrate with the SiO2 film grown by wet oxidation was found to be broader than those in the specimens fabricated by dry or ultradry oxidation. This was attributed to the fact that the concentration of oxygen clusters in the Si substrate for the specimen fabricated by wet oxidation was higher than those for the specimens fabricated by dry or ultradry oxidation.

引用

页码：3330 / 3334

页数：5

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