ELECTRICALLY ACTIVE INTERSTITIAL DEFECTS IN IRRADIATED N-TYPE SILICON

被引：0
|
作者：
LITVINKO, AG
MAKARENKO, LF
MURIN, LI
TKACHEV, VD
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 04期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：455 / 457
页数：3
相关论文
共 50 条
  • [41] NEGATIVE STAGE OF ANNEALING OF RADIATION DEFECTS IN N-TYPE SILICON
    LUGAKOV, PF
    LUKASHEVICH, TA
    SHUSHA, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1979, 13 (02): : 237 - 238
  • [42] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.
    Vavilov, V.S.
    Glaxman, V.B.
    Isaev, N.U.
    Mukashev, B.N.
    Spitsyn, A.V.
    Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305
  • [43] Limiting Defects in n-Type Multicrystalline Silicon Solar Cells
    Schubert, Martin C.
    Schindler, Florian
    Schoen, Jonas
    Kwapil, Wolfram
    Benick, Jan
    Mueller, Ralph
    Heinz, Friedemann D.
    Fell, Andreas
    Riepe, Stephan
    Morishige, Ashley
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2019, 216 (17):
  • [44] ORIENTATION DEPENDENCE OF THE FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON
    KRYUKOVA, IV
    VAVILOV, VS
    SOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 266 - 267
  • [45] ACCUMULATION OF ELECTRICALLY ACTIVE-CENTERS IN N-TYPE SILICON DUE TO ELECTRON AND LIGHT-ION BOMBARDMENT
    BULGAKOV, YV
    KOLOMENSKAYA, TI
    KUZNETSOV, NV
    SHEMAEV, BV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (09): : 1185 - 1186
  • [46] Capacitance changes in neutron irradiated n-type silicon: The flux effect
    Novoselnik, B.
    Pilipovic, M.
    Jacimovic, R.
    Pivac, B.
    Slunjski, R.
    Capan, I.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2010, 268 (15): : 2400 - 2402
  • [47] CHARACTERISTICS OF CHANGES IN MOBILITY IN NEUTRON-IRRADIATED N-TYPE SILICON
    LITVINKO, AG
    MURIN, LI
    TKACHEV, VD
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 933 - 935
  • [48] KINETIC COEFFICIENTS IN n-TYPE SILICON, IRRADIATED BY REACTOR FAST NEUTRONS
    Dolgolenko, A. P.
    PROBLEMS OF ATOMIC SCIENCE AND TECHNOLOGY, 2011, (04): : 14 - 19
  • [49] EFFECT OF LITHIUM ON RECOMBINATION IN N-TYPE SILICON IRRADIATED BY FAST ELECTRONS
    VAVILOV, VS
    KRYUKOVA, IV
    CHUKICHE.MV
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (09): : 2097 - +
  • [50] ELECTRICAL-PROPERTIES OF ELECTRON-IRRADIATED N-TYPE SILICON
    SIGFRIDSSON, B
    LINDSTROM, JL
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4611 - 4620
12345