ELECTRICALLY ACTIVE INTERSTITIAL DEFECTS IN IRRADIATED N-TYPE SILICON

被引：0
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作者：
LITVINKO, AG
MAKARENKO, LF
MURIN, LI
TKACHEV, VD
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来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 04期
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O469 [凝聚态物理学];
学科分类号：
070205 ;
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页码：455 / 457
页数：3
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