ELECTRON-SPIN RESONANCE STUDY OF METAL NITRIDE SILICON STRUCTURES - OBSERVATION OF SI DANGLING BONDS WITH DIFFERENT CONFIGURATIONS AND TRAPPING PROPERTIES IN SILICON-NITRIDE

被引:8
|
作者
JOUSSE, D [1 ]
KANICKI, J [1 ]
STATHIS, JH [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,POB 218,YORKTOWN HTS,NY 10598
关键词
D O I
10.1016/0169-4332(89)90458-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:412 / 419
页数:8
相关论文
共 25 条
  • [21] Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance
    Hugon, MC
    Delmotte, F
    Agius, B
    Courant, JL
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (06): : 3143 - 3153
  • [22] Electron spin resonance and photoluminescence study of charge trap centers in silicon nitride films and fabrication of proposed oxide-nitride-oxide sidewall 2-bit/Cell nonvolatile memories
    Toki, Atsushi
    Shinohara, Noriaki
    Kamigaki, Yoshiaki
    Nakano, Masayuki
    Shibata, Akihide
    Okumine, Tetsuya
    Shiomi, Takeshi
    Sugimoto, Kazuo
    Negishi, Tetsu
    Yoshioka, Fumiyoshi
    Kotak, Hiroshi
    Japanese Journal of Applied Physics, 2008, 47 (4 PART 2): : 2684 - 2686
  • [23] Electron spin resonance and photoluminescence study of charge trap centers in silicon nitride films and fabrication of proposed oxide-nitride-oxide sidewall 2-bit/cell nonvolatile memories
    Toki, Atsushi
    Shinohara, Noriaki
    Kamigaki, Yoshiaki
    Nakano, Masayuki
    Shibata, Akihide
    Okumine, Tetsuya
    Shiomi, Takeshi
    Sugimoto, Kazuo
    Negishi, Tetsu
    Yoshioka, Fumiyoshi
    Kotaki, Hiroshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2008, 47 (04) : 2684 - 2686
  • [24] Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal-insulator-semiconductor structures fabrication
    Peláez, R
    Castán, E
    Dueñas, S
    Barbolla, J
    Redondo, E
    Mártil, I
    González-Díaz, G
    JOURNAL OF APPLIED PHYSICS, 1999, 86 (12) : 6924 - 6930