Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal-insulator-semiconductor structures fabrication

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J Appl Phys | / 12卷 / 6924期
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  • [1] Electrical characterization of electron cyclotron resonance deposited silicon nitride dual layer for enhanced Al/SiNx:H/InP metal-insulator-semiconductor structures fabrication
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