DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF STAEBLER-WRONSKI EFFECT IN A-SI-H

被引：2

作者：

MIYANISHI, A ^{[1
]}

NAKATA, J ^{[1
]}

IMAO, S ^{[1
]}

SHIRAFUJI, J ^{[1
]}

KUBO, U ^{[1
]}

INUISHI, Y ^{[1
]}

机构：

[1] OSAKA UNIV,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 2B期

关键词：

A-SI-H; OPTICAL DEGRADATION; STAEBLER-WRONSKI EFFECT; DLTS; WEAK BOND; HOLE TRAP;

D O I：

10.1143/JJAP.30.L243

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Both voltage- and photoinjected DLTS study of the Staebler-Wronski effect in a-Si:H using isothermal high-speed capacitance-time (C-t) measurements (10(-3) approximately 10 s) were done to elucidate the processes of defect creation and annealing. It was found that the densities of hole traps at E(v) + 0.6 eV and electron traps at E(c) -0.4 eV were decreased by light soaking, accompanied by a simultaneous increase of electron traps at E(c) -0.9 eV and hole traps at E(v) + 0.8 eV due to the dangling bonds. This fact suggests that the shallower traps may relate to the weak bonds, which convert to the metastable dangling bonds by light soaking.

引用

页码：L243 / L245

页数：3

共 50 条

[31] Potential fluctuations and Staebler-Wronski effect
Agarwal, P
Agarwal, SC
SOLID STATE PHENOMENA, 1997, 55 : 140 - 142
[32] RF POWER DEPENDENCE OF THE STAEBLER-WRONSKI EFFECT
ACHARYA, PK
MALHOTRA, LK
CHOPRA, KL
THIN SOLID FILMS, 1988, 164 : 233 - 237
[33] Microscopic aspects of the Staebler-Wronski effect
Stutzmann, M
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 37 - 48
[34] Forty years of the Staebler-Wronski effect
Agarwal, Satish Chandra
Omar, Shobit
PHILOSOPHICAL MAGAZINE, 2018, 98 (27) : 2512 - 2528
[35] Persistent photoconductivity, the Staebler-Wronski effect, and long-range disorder in a-Si:H
Quicker, D
West, PW
Kakalios, J
AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY - 1997, 1997, 467 : 73 - 78
[36] Staebler-Wronski effect in hydrogenated amorphous silicon
Prasad, R
Shenoy, SR
PHYSICS LETTERS A, 1996, 218 (1-2) : 85 - 90
[37] Inverted Staebler-Wronski effect in nanocrystalline silicon
Matsumoto, T
Kondo, M
Nair, SV
Masumoto, Y
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1998, 227 : 320 - 323
[38] High temperature Staebler-Wronski effect in undoped high-resistivity α-Si:H films
Kurova, I.A.
Ormont, N.N.
Vestnik Moskovskogo Universita. Ser. 3 Fizika Astronomiya, 2001, (04): : 62 - 65
[39] THE STAEBLER-WRONSKI EFFECT IN MICROCRYSTALLINE SILICON FILMS
LIU, HN
XU, MD
SOLID STATE COMMUNICATIONS, 1986, 58 (09) : 601 - 603
[40] THE STAEBLER-WRONSKI EFFECT IN AMORPHOUS HYDROGENATED SILICON
WAGNER, D
ACTA PHYSICA AUSTRIACA, 1985, 57 (3-4): : 251 - 275

← 1 2 3 4 5 →