DEEP LEVEL TRANSIENT SPECTROSCOPY STUDY OF STAEBLER-WRONSKI EFFECT IN A-SI-H

Both voltage- and photoinjected DLTS study of the Staebler-Wronski effect in a-Si:H using isothermal high-speed capacitance-time (C-t) measurements (10(-3) approximately 10 s) were done to elucidate the processes of defect creation and annealing. It was found that the densities of hole traps at E(v) + 0.6 eV and electron traps at E(c) -0.4 eV were decreased by light soaking, accompanied by a simultaneous increase of electron traps at E(c) -0.9 eV and hole traps at E(v) + 0.8 eV due to the dangling bonds. This fact suggests that the shallower traps may relate to the weak bonds, which convert to the metastable dangling bonds by light soaking.